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PD5616S 33TQCN 99000 AT29C51 MX27C40 2SC32 BY228G IRF6215L
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  Datasheet File OCR Text:
 Transistor
2SC1573, 2SC1573A, 2SC1573B
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA879
Unit: mm
5.90.2 4.90.2
q q
High collector to emitter voltage VCEO. High transition frequency fT.
+0.3 +0.2
Parameter Collector to base voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 Collector to emitter voltage 2SC1573A 2SC1573B
Symbol
Ratings 250
Unit
2.540.15
VCBO
300 400 200
V
13.50.5
0.7-0.2
s Absolute Maximum Ratings
(Ta=25C)
0.70.1
8.60.2
s Features
VCEO VEBO ICP IC PC Tj Tstg
300 400
V
0.45-0.1 1.27 1.27
0.45-0.1
+0.2
Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
100 70 1 150 -55 ~ +150
mA mA W C C
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage 2SC1573 2SC1573A 2SC1573B 2SC1573 2SC1573A 2SC1573B
(Ta=25C)
Symbol ICBO VCEO Conditions VCB = 12V, IE = 0 200 IC = 100A, IB = 0 300 400 5 VEBO hFE* VCE(sat) fT IE = 1A, IC = 0 VCE = 10V, IC = 5mA IC = 50mA, IB = 5mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 50 80 5 Cob 4 10 8 pF 7 30 220 1.2 V MHz V V min typ max 2 Unit A
Emitter to base voltage
Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
*h
2SC1573 2SC1573A 2SC1573B
FE
Rank classification
P 30 ~ 100 Q 60 ~ 150 R 100 ~ 220 hFE
Rank
*2SC1573 for Ranks Q and R only
3.2
Emitter to base voltage
7
V
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L Package
1
Transistor
PC -- Ta
1.2 120
2SC1573, 2SC1573A, 2SC1573B
IC -- VCE
1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 80 0.8mA 0.6mA 0.4mA 40 0.2mA 20 120 Ta=25C IB=2mA 100 25C VCE=10V
IC -- VBE
Collector power dissipation PC (W)
1.0
100
Collector current IC (mA)
Collector current IC (mA)
Ta=75C 80
-25C
0.8
0.6
60
60
0.4
40
0.2
20
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 0.4 0.8 1.2 1.6 2.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
IC -- IB
Collector to emitter saturation voltage VCE(sat) (V)
120 VCE=10V Ta=25C 100 100 30
VCE(sat) -- IC
IC/IB=10 3.0
IB -- VBE
VCE=10V Ta=25C 2.5
Collector current IC (mA)
80
Base current IB (mA)
100
10 3 1 0.3 0.1 0.03 0.01 0.1 25C Ta=75C
2.0
60
1.5
40
1.0
-25C
20
0.5
0 0 0.4 0.8 1.2 1.6 2.0
0 0.3 1 3 10 30 0 0.2 0.4 0.6 0.8 1.0
Base current IB (mA)
Collector current IC (mA)
Base to emitter voltage VBE (V)
hFE -- IC
360 VCE=10V 160
fT -- I E
10
Cob -- VCB
Collector output capacitance Cob (pF)
VCB=10V Ta=25C 9 8 7 6 5 4 3 2 1 0 IE=0 f=1MHz Ta=25C
Forward current transfer ratio hFE
300
Transition frequency fT (MHz)
10 30 100
140 120 100 80 60 40 20
240
180 Ta=75C 120 25C -25C 60
0 0.1
0.3
1
3
0 -1
-3
-10
-30
-100
1
3
10
30
100
Collector current IC (mA)
Emitter current IE (mA)
Collector to base voltage VCB (V)
2
Transistor
ICBO -- Ta
104 VCB=250V 104
2SC1573, 2SC1573A, 2SC1573B
IEBO -- Ta
VEB=5V
Area of safe operation (ASO)
1000 300 Single pulse Ta=25C
103
103
Collector current IC (A)
100 30 10 3 1 0.3
ICP IC DC t=1ms
t=10ms
ICBO (Ta) ICBO (Ta=25C)
102
ICEO (Ta) ICEO (Ta=25C)
102
10
10
1 0 40 80 120 160 200
1 0 40 80 120 160 200
0.1 1 3 10 30 100 300 1000
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
3


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